S4108

1200V, 31A, Silicon-carbide (SiC) MOSFET Bare Die
Data Sheet Buy
S4108

S4108
1200V, 31A, Silicon-carbide (SiC) MOSFET Bare Die

S4108 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage withstand capability, low ON-state resistance, and fast switching speed.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.

Data Sheet Buy
* This is a standard-grade product.
For Automotive usage, please contact Sales.
Data Sheet Buy

Product Detail

 
Part Number | S4108
Status | Active
Package |
Unit Quantity |
Minimum Package Quantity |
Packing Type |
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mO]

80.0

Generation

3rd Gen

Drain Current[A]

31.0

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Find Similar

Features:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
SHOW/HIDE COLUMNS
New Product List