N-channel Silicon Carbide Power MOSFET bare die - S4108 | ROHM Semiconductor - ROHM Co., Ltd.
Rohm Productdetail
N-channel Silicon Carbide Power MOSFET bare die - S4108
S4108 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage withstand capability, low ON-state resistance, and fast switching speed.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
* This product is a STANDARD grade product and not recommend for on-vehicle devices.
×
Specifications:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mO]
80.0
Drain Current[A]
31.0
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Features:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive