White Paper
- Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
- LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units
S4108 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage withstand capability, low ON-state resistance, and fast switching speed.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mO]
80.0
Drain Current[A]
31.0
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175