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N-channel Silicon Carbide Power MOSFET bare die - S4108

S4108 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage withstand capability, low ON-state resistance, and fast switching speed.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number | S4108
Status | Active
Package |
Unit Quantity |
Minimum Package Quantity |
Packing Type |
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mO]

80.0

Drain Current[A]

31.0

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Features:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive