S4101
1200V, 55A, Silicon-carbide (SiC) MOSFET Bare Die

S4101 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage withstand capability, low ON-state resistance, and fast switching speed.
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Data Sheet Buy
* This is a standard-grade product.
For Automotive usage, please contact Sales.

Product Detail

 
Part Number | S4101
Status | Active
Package |
Unit Quantity |
Minimum Package Quantity |
Packing Type |
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mO]

40.0

Drain Current[A]

55.0

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Features:

· Low ON resistance
· Fast switching speed
· Fast revese recovery
· Easy to parallel
· Simple to drive

Design Resources

 

Documents

White Paper

  • Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
  • LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units

Technical Articles

Schematic Design & Verification

  • [NEW]Application Note for SiC Power Devices and Modules
  • Calculation of Power Dissipation in Switching Circuit
  • Method for Monitoring Switching Waveform
  • Importance of Probe Calibration When Measuring Power: Deskew
  • Impedance Characteristics of Bypass Capacitor

Thermal Design

  • What Is Thermal Design
  • Method for Calculating Junction Temperature from Transient Thermal Resistance Data
  • Notes for Temperature Measurement Using Thermocouples
  • Two-Resistor Model for Thermal Simulation
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • What is a Thermal Model? (SiC Power Device)
  • How to Use Thermal Models
  • Measurement Method and Usage of Thermal Resistance RthJC
  • Precautions When Measuring the Rear of the Package with a Thermocouple

Tools

Models

  • S4101 SPICE Model
  • How to Create Symbols for PSpice Models