ROHM Product Detail

BM6GD11BFJ-LB (New)
Isolation Voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation for GaN HEMT

This product is a rank product for the industrial equipment market. This is the best product for use in these applications. BM6GD11BFJ-LB is a 1-channel gate driver with built-in isolation, capable of driving GaN HEMTs at high speeds. It has an isolation voltage of2500 Vrms, a maximum input/output delay time of 60ns, and a minimum input pulse width of 65ns. The output driver pins on the source and sink sides are separated. These pins generate a switching waveform with slew rate at the rising and falling edges individually adjusted by inserting a resistor between the gate pins of the GaN HEMT. In addition, an under-voltage lockout function (UVLO) is built into the input side (between VCC1 and GND1) and the output side (between VCC2 and GND2), respectively.

Data Sheet Buy Sample
Data Sheet Buy Sample

Product Detail

 
Part Number | BM6GD11BFJ-LBE2
Status | Recommended
Package | SOP-JW8
Packing Type | Taping
Unit Quantity | 2500
Minimum Package Quantity | 2500
RoHS | Yes

Specifications:

Configuration

High-side,Low-side,Half-bridge

Isolation Type

Isolated

Isolation Voltage[Vrms]

2500

Channel

1

Vcc1(Min.)[V]

4.5

Vcc1(Max.)[V]

5.5

Vcc2(Min.)[V]

4.5

Vcc2(Max.)[V]

6

I/O Delay Time(Max.)[ns]

Rise=8ns(typ)/ Fall=8ns(typ)

Min. Input Pulse Width[ns]

65

CMTI (Min.)[kV/μs]

150

Operating Temperature (Min.)[°C]

-40

Operating Temperature (Max.)[°C]

125

Temperature Monitor

No

Package Size [mm]

4.9x6.0 (t=1.65)

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Features:

  • Built-in Galvanic Isolation
  • Under-voltage Lockout Function

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