Models
- RUF015N02 SPICE Model
- RUF015N02 Thermal Model (lib)
Characteristics Data
- ESD Data
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Grade
Standard
Package Code
SOT-323T
JEITA Package
SC-113A
Package Size[mm]
2.0x2.1 (t=0.85)
Number of terminal
3
Polarity
Nch
Drain-Source Voltage VDSS[V]
20
Drain Current ID[A]
1.5
RDS(on)[Ω] VGS=1.8V(Typ.)
0.22
RDS(on)[Ω] VGS=2.5V(Typ.)
0.17
RDS(on)[Ω] VGS=4.5V(Typ.)
0.13
RDS(on)[Ω] VGS=Drive (Typ.)
0.22
Total gate charge Qg[nC]
1.8
Power Dissipation (PD)[W]
0.8
Drive Voltage[V]
1.8
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150