US6M1
4V Drive Nch + 2.5V Drive Pch MOSFET

Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

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Product Detail

 
Part Number | US6M1TR
Status | Active
Package | TUMT6
Packing Type | Taping
Unit Quantity | 3000
Minimum Package Quantity | 3000
RoHS | Yes

Specifications:

Package Code

SOT-363T

JEITA Package

SC-113DA

Number of terminal

6

Polarity

Nch+Pch

Drain-Source Voltage VDSS[V]

30

Drain Current ID[A]

1.4

RDS(on)[Ω] VGS=4V(Typ)

0.27

RDS(on)[Ω] VGS=10V(Typ)

0.17

RDS(on)[Ω] VGS=Drive (Typ)

0.27

Total gate charge Qg[nC]

1.4

Power Dissipation (PD)[W]

1

Drive Voltage[V]

4

Mounting Style

Surface mount

Storage Temperature (Min)[℃]

-55

Storage Temperature (Max)[℃]

150

Package Size [mm]

2.0x2.1 (t=0.85)

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Features:

· Nch+Pch Middle-power MOSFET
· Fast Switching Speed
· Small Surface Mount Package
· Pb Free/RoHS Compliant
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