UM6J1N
4V Drive Dual P-channel MOSFET
UM6J1N
4V Drive Dual P-channel MOSFET
Complex type MOSFETs (P+P) are made as low on-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Package Code
SOT-363
JEITA Package
SC-88
Number of terminal
6
Polarity
P+P
Drain-Source Voltage VDSS[V]
-30
Drain Current ID[A]
-0.2
RDS(on)[Ω] VGS=4V(Typ)
1.6
RDS(on)[Ω] VGS=4.5V(Typ)
1.4
RDS(on)[Ω] VGS=10V(Typ)
0.9
RDS(on)[Ω] VGS=Drive (Typ)
1.6
Power Dissipation (PD)[W]
0.15
Drive Voltage[V]
-4
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
2.1x2.0 (t=0.9)
Features:
· 4V-drive type· Dual P-channel Small-signal MOSFET
· Small Surface Mount Package
· Pb Free/RoHS Compliant
