QS8M51
100V Nch+Pch Small Signal MOSFET
QS8M51
100V Nch+Pch Small Signal MOSFET
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Package Code
TSMT8
Number of terminal
8
Polarity
Nch+Pch
Drain-Source Voltage VDSS[V]
100
Drain Current ID[A]
2
RDS(on)[Ω] VGS=4V(Typ)
0.26
RDS(on)[Ω] VGS=4.5V(Typ)
0.25
RDS(on)[Ω] VGS=10V(Typ)
0.24
RDS(on)[Ω] VGS=Drive (Typ)
0.26
Total gate charge Qg[nC]
4.7
Power Dissipation (PD)[W]
1.5
Drive Voltage[V]
4
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
2.8x3.0 (t=0.85)
Features:
· 4Ｖ-drive type· Nch+Pch Middle-power MOSFET
· Fast Switching Speed
· Small Surface Mount Package
· Pb Free/RoHS Compliant
