100V Nch+Pch Small Signal MOSFET - QS8M51
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
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Specifications:
Grade
Standard
Package Code
TSMT8
Package Size[mm]
3.0x2.8 (t=0.8)
Number of terminal
8
Polarity
Nch+Pch
Drain-Source Voltage VDSS[V]
100
Drain Current ID[A]
2.0
RDS(on)[Ω] VGS=4V(Typ.)
0.26
RDS(on)[Ω] VGS=4.5V(Typ.)
0.25
RDS(on)[Ω] VGS=10V(Typ.)
0.24
RDS(on)[Ω] VGS=Drive (Typ.)
0.26
Total gate charge Qg[nC]
4.7
Power Dissipation (PD)[W]
1.5
Drive Voltage[V]
4.0
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Features:
· 4Ｖ-drive type· Nch+Pch Middle-power MOSFET
· Fast Switching Speed
· Small Surface Mount Package
· Pb Free/RoHS Compliant