QS8K13
30V Nch+Nch Small Signal MOSFET
QS8K13
30V Nch+Nch Small Signal MOSFET
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Package Code
TSMT8
Applications
Switching
Number of terminal
8
Polarity
Nch+Nch
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
6
RDS(on)[Ω] VGS=4V(Typ.)
0.028
RDS(on)[Ω] VGS=4.5V(Typ.)
0.025
RDS(on)[Ω] VGS=10V(Typ.)
0.02
RDS(on)[Ω] VGS=Drive (Typ.)
0.028
Total gate charge Qg[nC]
5.5
Power Dissipation (PD)[W]
1.5
Drive Voltage[V]
4
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
3.0x2.8 (t=0.85)
Features:
· 4Ｖ-drive type· Nch+Nch Middle-power MOSFET
· Fast Switching Speed
· Small Surface Mount Package
· Pb Free/RoHS Compliant
