EM6M2
1.2V Drive Complementary MOSFET
EM6M2
1.2V Drive Complementary MOSFET
Complex type MOSFETs (P+N) are made as low on-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Package Code
SOT-563
JEITA Package
SC-107C
Number of terminal
6
Polarity
N+P
Drain-Source Voltage VDSS[V]
20
Drain Current ID[A]
0.2
RDS(on)[Ω] VGS=1.2V(Typ)
1.6
RDS(on)[Ω] VGS=2.5V(Typ)
0.8
RDS(on)[Ω] VGS=4V(Typ)
0.7
RDS(on)[Ω] VGS=Drive (Typ)
1.6
Power Dissipation (PD)[W]
0.15
Drive Voltage[V]
1.2
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
1.6x1.6 (t=0.55)
Features:
· Low voltage (1.2V) drive type· Complementary Small-signal MOSFET
· Small Surface Mount Package
· Pb Free/RoHS Compliant
