RGTH50TK65D
High-Speed Switching Type, 650V 25A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT
RGTH50TK65D
High-Speed Switching Type, 650V 25A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Series
TH: High speed SW
VCES [V]
650
IC(100°C)[A]
16
VCE(sat) (Typ.) [V]
1.6
tf(Typ.) [ns]
50
Built-in Diode
FRD
Pd [W]
59
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
Features:
- Low Collector-Emitter Saturation Voltage
- High Speed Switching
- Low Switching Loss & Soft Switching
- Built in Very Fast & Soft Recovery FRD (RFN-Series)
- Pb-free Lead Plating; RoHS Compliant
