GNP2250TB-Z (New)
EcoGaN™, 650V 6.8A DFN5060K, E-mode Gallium-Nitride(GaN) HEMT
GNP2250TB-Z (New)
EcoGaN™, 650V 6.8A DFN5060K, E-mode Gallium-Nitride(GaN) HEMT
GNP2250TB-Z is an 650V GaN HEMT which has achieved the industry's highest class FOM (Ron*Ciss、Ron*Coss). It is a product of the EcoGaN™ series that contributes to power conversion efficiency and size reduction by making the best use of low ON resistance and high-speed switching. ESD protection function is built in for high-reliability design. In addition, the highly versatile packages provide excellent heat dissipation and facilitates mounting. Looking for the Gate Driver inspiring GaN HEMT performance? → Gate Drivers for GaN
Product Detail
Specifications:
VDS [V]
650
IDS [A]
6
VGS Rating [V]
6.5
RDS(on) [mΩ]
250
Qg [nC]
1.2
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Dimensions [mm]
5.0x6.0 (t=0.9)
Features:
- 650V E-mode GaN HEMT
- 250mΩ Resistance
- 1.2nC Gate Charge
