GNP1070TC-Z
EcoGaN™, 650V 20A DFN8080K, E-mode Gallium-Nitride(GaN) FET
GNP1070TC-Z
EcoGaN™, 650V 20A DFN8080K, E-mode Gallium-Nitride(GaN) FET
GNP1070TC-Z is an 650V GaN HEMT which has achieved the industry's highest class FOM (Ron*Ciss、Ron*Coss). It is a product of the EcoGaN™ series that contributes to power conversion efficiency and size reduction by making the best use of low ON resistance and high-speed switching. ESD protection function is built in for high-reliability design. In addition, the highly versatile packages provide excellent heat dissipation and facilitates mounting.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
VDS [V]
650
IDS [A]
20
VGS Rating [V]
6
RDS(on) [mΩ]
70
Qg [nC]
5.2
Dimensions [mm]
8.0x8.0 (t=0.9)
Features:
- 650V E-mode GaN FET
- 70mΩ Resistance
- 5.2nC Gate Charge
Supporting Information
Overview
This product deliver industry-leading performance in terms of RDS(ON) × Ciss / RDS(ON) × Coss, a figure of merit for GaN HEMTs, translating to higher efficiency in power supply systems. At the same time, a built-in ESD protection element improves electrostatic breakdown resistance up to 3.5kV, leading to higher application reliability. GaN HEMTs’ high-speed switching characteristics also contribute to greater miniaturization of peripheral components.
Application Examples
Ideal for a broad range of power supply systems in industrial equipment and consumer devices, including servers and AC adapters
