GNE1008TB (Under Development)
EcoGaN™, 150V 30A DFN5060, E-mode Gallium-Nitride(GaN) HEMT
GNE1008TB (Under Development)
EcoGaN™, 150V 30A DFN5060, E-mode Gallium-Nitride(GaN) HEMT
GNE1008TB is an 8V Gate Source Voltage 150V GaN HEMT. It is a product of the EcoGaN™ series that contributes to power conversion efficiency and reducing size by making the best use of low ON resistance and high-speed switching, and the power supply efficiency is 96.5% or more even in the high frequency band of 1MHz. In addition, the highly versatile packages provide excellent heat dissipation and facilitates mounting. Looking for the Gate Driver inspiring GaN HEMT performance? → Gate Drivers for GaN
Product Detail
Specifications:
VDS [V]
150
IDS [A]
30
VGS Rating [V]
8
RDS(on) [mΩ]
8.5
Qg [nC]
7
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Dimensions [mm]
5.0x6.0 (t=1.0)
Features:
- E-mode
- Reliable and easy to use with DFN package
- High gate voltage maximum rating 8V
- Very high switching frequency
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