GNE1008TB (Under Development)
EcoGaN™, 150V 30A DFN5060, E-mode Gallium-Nitride(GaN) HEMT
GNE1008TB (Under Development)
EcoGaN™, 150V 30A DFN5060, E-mode Gallium-Nitride(GaN) HEMT
GNE1008TB is an 8V Gate Source Voltage 150V GaN HEMT. It is a product of the EcoGaN™ series that contributes to power conversion efficiency and reducing size by making the best use of low ON resistance and high-speed switching, and the power supply efficiency is 96.5% or more even in the high frequency band of 1MHz. In addition, the highly versatile packages provide excellent heat dissipation and facilitates mounting.
Product Detail
Specifications:
VDS [V]
150
IDS [A]
30
VGS Rating [V]
8
RDS(on) [mΩ]
8.5
Qg [nC]
7
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Dimensions [mm]
5.0x6.0 (t=1.0)
Features:
- E-mode
- Reliable and easy to use with DFN package
- High gate voltage maximum rating 8V
- Very high switching frequency
