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What are the temperature conditions for the breakdown voltage specifications of SiC MOSFETs?
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What are the temperature conditions for the breakdown voltage specifications of SiC MOSFETs?
Room temperature (Ta=25°C).
Please note that the leakage current and breakdown voltage may rise slightly at high temperatures.
Products:
Silicon-carbide (SiC) Power Devices
,
SiC MOSFETs
,
SiC Power Module
,
SiC MOSFET Bare Die
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