YQ5RSM10SD
Trench MOS Structure, 100V, 5A, TO-277GE, Highly Efficient SBD
YQ5RSM10SD
Trench MOS Structure, 100V, 5A, TO-277GE, Highly Efficient SBD
The YQ5RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Configuration
Single
Package Code
TO-277A
Mounting Style
Surface mount
Number of terminal
3
VRM[V]
100
Reverse Voltage VR[V]
100
Average Rectified Forward Current IO[A]
5
IFSM[A]
80
Forward Voltage VF(Max.)[V]
0.77
IF @ Forward Voltage [A]
5
Reverse Current IR(Max.)[mA]
0.025
VR @ Reverse Current[V]
100
Tj[℃]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
6.5x4.6 (t=1.2)
Features:
- High reliability
- Power mold type
- Low VF and low IR
- Low capacitance
Supporting Information
Overview
The YQ series is ROHM’s first to adopt a trench MOS structure. The proprietary design achieves class-leading trr of 15ns that reduces trr loss by approx. 37% and overall switching loss by approx. 26% over general trench-type MOS products, contributing to lower application power consumption. The new structure also improves both VF and IR loss compared to conventional planar type SBDs. This results in lower power loss when used in forward bias applications such as rectification, while also providing less risk of thermal runaway which is a major concern with SBDs. As such, they are ideal for sets requiring high-speed switching, such as drive circuits for automotive LED headlamps and DC-DC converters in xEVs that are prone to generate heat.
Application Examples
• Automotive LED headlamps • xEV DC-DC converters • Power supplies for industrial equipment • Lighting
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