YQ3LAM10D (New)
Trench MOS Structure, 100V, 3A, PMDTM, Highly Efficient SBD
YQ3LAM10D
YQ3LAM10D (New)
Trench MOS Structure, 100V, 3A, PMDTM, Highly Efficient SBD
The YQ30NL10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
Data Sheet
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* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
Product Detail
Part Number | YQ3LAM10DTR
Status |
Recommended
Package |
PMDTM
Unit Quantity | 3000
Minimum Package Quantity | 3000
Packing Type | Taping
RoHS |
Yes
Product Longevity Program |
10 Years
Specifications:
Configuration
Single
Package Code
SOD-128
Mounting Style
Surface mount
Number of terminal
2
VRM[V]
100
Reverse Voltage VR[V]
100
Average Rectified Forward Current IO[A]
3
IFSM[A]
80
Forward Voltage VF(Max.)[V]
0.64
IF @ Forward Voltage [A]
3
Reverse Current IR(Max.)[mA]
0.03
VR @ Reverse Current[V]
100
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
2.5x4.7 (t=1.05)
Features:
- High reliability
- Small power mold type
- Low VF and low IR
- Low capacitance
