Super Fast Recovery Diode - RFN10BGE6S (New)

RFN10BGE6S is the silicon epitaxial planar type Fast Recovery Diode.

* This is a standard-grade product.
For Automotive usage, please contact Sales.
Part Number | RFN10BGE6STL
Status | Recommended
Package | TO-252
Unit Quantity | 2500
Minimum Package Quantity | 2500
Packing Type | Taping
RoHS | Yes

Specifications:

Grade

Standard

Package Code

TO-252 (DPAK)

Package(JEITA)

SC-63

Package Size[mm]

6.6x10.0 (t=2.2)

Mounting Style

Surface mount

Number of terminal

3

VRM[V]

600

Reverse Voltage VR[V]

600

Average Rectified Forward Current IO[A]

10.0

IFSM[A]

100.0

Forward Voltage VF(Max.)[V]

1.55

IF @ Forward Voltage [A]

10.0

Reverse Current IR(Max.)[mA]

0.01

VR @ Reverse Current [V]

600

trr(Max.)[ns]

50

IF @ trr [mA]

500

IR @ trr [A]

1.0

Storage Temperature (Min.)[℃]

-55

Storage Temperature (Max.)[℃]

150

Features:

  • Low switching loss
  • High current overload capacity