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What are GaN power power devices (GaN HEMTs)?

What are GaN Power Devices GaN is a compound semiconductor material used to create high-performance devices known as GaN HEMTs.
Compared to silicon, which is currently the mainstream semiconductor material, GaN power devices are characterized by low conduction loss (low ON resistance) and excellent high-speed switching performance, meeting market demands for improved power conversion efficiency and miniaturization.
What is GaN GaN (Gallium Nitride) is a compound semiconductor composed of Gallium (Ga) and Nitrogen (N).
A compound semiconductor is a type of semiconductor consisting of two or more elements bonded together.
What is GaN HEMT HEMT stands for High Electron Mobility Transistor.
A HEMT is a transistor that uses semiconductor materials with high electron mobility, enabling high-speed switching (high-frequency operation).
Fully Utilizing GaN Power Devices Maximizing the high-speed switching performance of GaN HEMTs requires specialized expertise.
This specifically involves using ultra-high-speed gate drivers and controller ICs capable of high-speed pulse control.