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Interleaved Boost PFC


By shifting the phase of the two boost converters by 180 degrees, it is possible to reduce the current stress in the inductors and switches, as well as the ripple current in the capacitors. This topology is useful for high power applications (several kW).


- Low noise & large power output
- Efficiency around 98%
- Frequency 70 kHz to 130 kHz
- Needs larger PCB space due to higher part count



Key Products

Product Category Product family Product Number Feature
Switching Transistor 600 / 650V SJ MOS R60xxKN /R65xxKN Good compromise between performance and ease of use.
650 V IGBT RGWxx series IGBT proposal for lower cost, but comprising efficiency.
Diodes 650 V SiC SBD SCS3xx series Increased surge current mode capability of 3rd gen.
650V Si FRD RFS series Lower Vf than RSV series, but ultra fast switching capability
RFL series Improve fast switching capability than RFN series.
600 V Si FRD RFV series fast trr for CCM PFC (600V only)lower cost solution vs SiC SBD
RFN series low VF for DCM PFC (600V only) lower cost solution vs SiC SBD
Gate Driver Isolated BM61xxx Series 1ch 3750Vrms isolated, for devices including driver source pin.
non-Isolated BD2310G 1ch non-isolated, simplest solution available.


A-006 : Interleaved Boost PFC VIN=200V, IIN=2.5A, CCM

Related Topologies

Boost PFC

Totem-Pole Bridgeless PFC (Diode Rectification)

Totem-Pole Bridgeless PFC (Synchronous FETs)