Silicon Carbide (SiC) is emerging as the most viable candidate in the search for a next-generation, low-loss semiconductor element due to its low ON resistance and superior high temperature, high frequency, and high voltage performance when compared to silicon.
ROHM is at the forefront in the development of Silicon Carbide (SiC) power devices and modules, improving power savings in a number of applications.
These applications include:
-High-efficiency inverters in DC/AC converters for solar/wind power supplies -Electric/hybrid vehicles power conversion
-Power inverters for industrial equipment and air conditioners
-Thin-film coating processes
Our portfolio includes SiC Schottky barrier diodes (SBD's), SiC MOSFET's, full SiC power modules (which integrate SiC SBDs and MOSFETs), and high heat resistance power modules. These compact and efficient semiconductor devices have the potential to substantially reduce end-product size.