EMD9
NPN+PNP, SOT-563, Dual Digital Transistor (Bias Resistor Built-in Transistor)

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.

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Product Detail

 
Part Number | EMD9T2R
Status | Active
Package | EMT6
Unit Quantity | 8000
Minimum Package Quantity | 8000
Packing Type | Taping
RoHS | Yes

Specifications:

Grade

Standard

Package Code

SOT-563

Package Size [mm]

1.6x1.6 (t=0.55)

JEITA Package

SC-107C

Number of terminal

6

Polarity

NPN+PNP

Supply voltage VCC 1[V]

50.0

Collector current Io (Ic) [A]

0.1

Input resistance R1 1 [kΩ]

10.0

Emitter base Resistance R2 1 [kΩ]

47.0

Supply voltage VCC 2[V]

-50.0

Collector current IC 2[A]

-0.1

Input resistance R1 2 [kΩ]

10.0

Emitter base Resistance R2 2 [kΩ]

47.0

Power Dissipation (PD)[W]

0.15

Mounting Style

Surface mount

Equivalent (Single Part)

DTA114Y / DTC114Y

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

Features:

· Ultra-compact complex digital transistor
· Built-In Biasing Resistors
· Leak absorption type
· Small Surface Mount Package
· Pb Free/RoHS Compliant
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Design Resources

 

Documents

Data Sheet

Tools

Models

2D/3D/CAD

  • EMT6 STEP Data

Characteristics Data