EMF5
PNP Low VCE(sat) Transistor + NPN Digital transistor

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.

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Product Detail

 
Part Number | EMF5T2R
Status | Active
Package | EMT6
Unit Quantity | 8000
Minimum Package Quantity | 8000
Packing Type | Taping
RoHS | Yes

Specifications:

Grade

Standard

Package Code

SOT-563

Package Size [mm]

1.6x1.6 (t=0.55)

JEITA Package

SC-107C

Number of terminal

6

Polarity

BIP_PNP+DTR_NPN

Supply voltage VCC 1[V]

50.0

Collector current IC 1[A]

0.1

Input resistance R1 1[kΩ]

47.0

Emitter base Resistance R2 1[kΩ]

47.0

hFE

68 to

Collector-Emitter voltage VCEO1[V]

-12.0

Collector current Io(Ic) [A]

-0.5

Mounting Style

Surface mount

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

Features:

· Ultra-compact complex bipolar transistor
· Built-In Biasing Resistors
· For power management
· Small Surface Mount Package
· Pb Free/RoHS Compliant
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Design Resources

 

Documents

Data Sheet

Tools

Models

2D/3D/CAD

  • EMT6 STEP Data

Characteristics Data