Silicon Carbide Schottky Barrier Diode - SCS312AJ | ROHM Semiconductor - ROHM Co., Ltd.
Rohm Productdetail
Silicon Carbide Schottky Barrier Diode - SCS312AJ (New)
Low forward voltage, negligible recovery time/current. Suitable for switch mode power supply, uninterruptible power supply, solar inverter, etc.
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Specifications:
Grade
Standard
Reverse Voltage[V]
650
Continuous Forward Current[A]
12.0
Total Power Dissipation[W]
88
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Features:
- Low forward voltage
- Negligible recovery time/current
- Temperature independent switching behavior
- High surge current capability
- Low leakage current