Silicon Carbide Schottky Barrier Diode - SCS306AJ | ROHM Semiconductor - ROHM Co., Ltd.
Rohm Productdetail
Silicon Carbide Schottky Barrier Diode - SCS306AJ (New)
Low forward voltage, negligible recovery time/current. Suitable for switch mode power supply, uninterruptible power supply, solar inverter, etc.
×
Specifications:
Grade
Standard
Reverse Voltage[V]
650
Continuous Forward Current[A]
6.0
Total Power Dissipation[W]
50
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Features:
- Low forward voltage
- Negligible recovery time/current
- Temperature independent switching behavior
- High surge current capability
- Low leakage current