650V, 6A, THD, High Surge Resistance, Silicon-carbide (SiC) SBD - SCS306AH
Shorter recovery time, enabling high-speed switching.
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Specifications:
Grade
Standard
Reverse Voltage[V]
650
Continuous Forward Current[A]
6.0
Total Power Dissipation[W]
46
Junction Temperature(Max.)[℃]
175
Storage Temperature (Min.)[℃]
-55
Storage Temperature (Max.)[℃]
175
Features:
- Shorter recovery time
- Reduced temperature dependence
- High-speed switching possible
- High surge current capability