Silicon-carbide (SiC) Schottky Barrier Diode - SCS220AJ
Switching loss reduced, enabling high-speed switching . (4-pin package)
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Specifications:
Grade
Standard
Reverse Voltage[V]
650
Continuous Forward Current[A]
20.0
Total Power Dissipation[W]
100
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Features:
・Shorter recovery time・Reduced temperature dependence
・High-speed switching possible