SCS220AE
SCS220AE
650V, 20A, 3-pin THD, Silicon-carbide (SiC) SBD
Switching loss reduced, enabling high-speed switching . (2-pin package)
Data Sheet
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* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
Product Detail
Part Number | SCS220AEGC11
Status |
Recommended
Package |
TO-247N
Unit Quantity | 450
Minimum Package Quantity | 30
Packing Type | Bulk
RoHS |
Yes
Specifications:
Grade
Standard
Reverse Voltage[V]
650
Continuous Forward Current[A]
20.0
Total Power Dissipation[W]
130
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
Features:
・Shorter recovery time・Reduced temperature dependence
・High-speed switching possible
Design Resources
Documents
Technical Articles
Schematic Design & Verification
Thermal Design
- What Is Thermal Design
- Basics of Thermal Resistance and Heat Dissipation
- Method for Calculating Junction Temperature from Transient Thermal Resistance Data
- Notes for Temperature Measurement Using Thermocouples
- Two-Resistor Model for Thermal Simulation
- Notes for Temperature Measurement Using Forward Voltage of PN Junction
- What is a Thermal Model? (SiC Power Device)
- How to Use Thermal Models
- Measurement Method and Usage of Thermal Resistance RthJC
- Precautions When Measuring the Rear of the Package with a Thermocouple
Tools
Models
- SCS220AE SPICE Simulation Evaluation Circuit
- SCS220AE SPICE Model
- SCS220AE Thermal Model (lib)
- How to Create Symbols for PSpice Models