SiC Schottky Barrier Diode Bare Die - S6306
S6306 is an SiC (Silicon Carbide) epitaxial planar type Schottky Barrier Diode. The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation.
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Continuous Forward Current[A]
Storage Temperature (Min.)[°C]
Storage Temperature (Max.)[°C]
Features:· Shorter recovery time
· Reduced temperature dependence
· High-speed switching possible