ROHM Product Detail

S6306
1200V, 15A, Silicon-carbide (SiC) SBD Bare Die

S6306 is an SiC (Silicon Carbide) epitaxial planar type Schottky Barrier Diode. The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.

Data Sheet Buy Sample
* This is a standard-grade product.
For Automotive usage, please contact Sales.

Product Detail

 
Part Number | S6306
Status | Active
Package |
Unit Quantity | 0
Minimum Package Quantity | 0
RoHS | Yes

Specifications:

Reverse Voltage[V]

1200

Continuous Forward Current[A]

15

Generation

2nd Gen

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

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Features:

· Shorter recovery time
· Reduced temperature dependence
· High-speed switching possible
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