SCT4036DTW (New)
750V, 40A, 9-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT4036DTW (New)
750V, 40A, 9-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
This product is a SiC MOSFET in the TSC3PAK package. Featuring a top-side heat dissipation structure with the heat dissipation surface located on the top of the package, TSC3PAK achieves heat dissipation performance comparable to conventional through-hole packages while maintaining a surface-mount design. In addition, ROHM’s proprietary groove structure secures a creepage distance of 6.66mm, enabling support for an AC peak voltage of 1200V in Pollution Degree 2 environments. This contributes to safe insulation design and higher reliability in high-voltage applications. Furthermore, the product achieves low ON resistance and high-speed switching, contributing to greater efficiency and lower power consumption in power conversion circuits. It is ideal for onboard chargers and electric compressors in xEVs, as well as PV inverters and server power supplies.
Product Detail
Specifications:
Drain-source Voltage[V]
750
Drain-source On-state Resistance(Typ.)[mΩ]
36
Generation
4th Gen (Trench)
Drain Current[A]
40
Total Power Dissipation[W]
128
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
14.0x18.58 (t=3.625)
Features:
- Wide creepage distance = min.6.66mm
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
Supporting Information
Overview
This product is a SiC MOSFET in the TSC3PAK (14.00 × 18.58 × 3.50mm) package. By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, the product enables automated mounting while achieving heat dissipation performance comparable to that of conventional through-hole packages (TO-247-4L).
The package incorporates ROHM’s proprietary groove structure to secure a creepage distance of 6.66mm, allowing it to accommodate an AC peak voltage of 1200 V in a Pollution Degree 2 environment while maintaining compatibility with products widely adopted in the market. By enabling safe insulation design in high-voltage applications, the product also contributes to reduced mounting costs and higher reliability.
The product incorporates ROHM’s 4th Generation SiC MOSFET, achieving low ON resistance and high-speed switching characteristics. As a result, switching losses during power conversion are significantly reduced, contributing to greater application efficiency and lower power consumption.
Development Background
In industrial equipment, SiC devices are increasingly being used in high-performance server power supplies and PV inverters, where high-efficiency operation is required.
Conventional SiC devices have generally relied on through-hole packages, which provide excellent heat dissipation during high-power operation. However, through-hole type devices involve manual mounting processes, and their form factor makes it difficult to achieve a lower package profile.
Against this backdrop, surface-mount SiC devices compatible with automated mounting have begun gaining adoption. To address these issues, this product delivers heat dissipation performance comparable to through-hole technology such as TO-247 in a surface-mount package.
Application Examples
・Industrial Equipment: PV inverters, server power supplies
