SCT3160KW7HR
1200V, 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

AEC-Q101 qualified automotive grade product. SCT3160KW7HR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Product Detail

 
Part Number | SCT3160KW7HRTL
Status | Recommended
Package | TO-263-7L
Unit Quantity | 1000
Minimum Package Quantity | 1000
Packing Type | Taping
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

160

Generation

3rd Gen (Trench)

Drain Current[A]

17

Total Power Dissipation[W]

100

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

10.2x15.4 (t=4.7)

Common Standard

AEC-Q101 (Automotive Grade)

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Features:

  • Qualified to AEC-Q101
  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant

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