ROHM Product Detail

SCT3080AW7

650V 29A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

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SCT3080AW7

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SCT3080AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

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* This is a standard-grade product.
For Automotive usage, please contact Sales.

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Part Number | SCT3080AW7TL

Status | Recommended

Package | TO-263-7L

Packing Type | Taping

Unit Quantity | 1000

Minimum Package Quantity | 1000

RoHS | Yes

Drain-source Voltage[V]

650

Drain-source On-state Resistance(Typ.)[mΩ]

Generation

3rd Gen (Trench)

Drain Current[A]

Total Power Dissipation[W]

125

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

15.4x10.2 (t=4.7)

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