SCT3080ARHR
650V, 30A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
SCT3080ARHR
SCT3080ARHR
650V, 30A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
AEC-Q101 qualified automotive grade product. SCT3080ARHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Product Detail
Part Number | SCT3080ARHRC15
Status |
Recommended
Package |
TO-247-4L
Unit Quantity | 450
Minimum Package Quantity | 30
Packing Type | Tube
RoHS |
Yes
Product Longevity Program |
10 Years
Specifications:
Drain-source Voltage[V]
650
Drain-source On-state Resistance(Typ.)[mΩ]
80
Generation
3rd Gen (Trench)
Drain Current[A]
30
Total Power Dissipation[W]
134
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x23.45 (t=5.2)
Common Standard
AEC-Q101 (Automotive Grade)
Features:
- Qualified to AEC-Q101
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
