SCT2280KEHR
1200V, 14A, THD, Silicon-carbide (SiC) MOSFET for Automotive

This is SiC (Silicon Carbide) planar MOSFET. This product have high voltage resistance, low ON resistance, and fast switching speed features. AEC-Q101 qualified automotive grade product.

Product Detail

 
Part Number | SCT2280KEHRC11
Status | Recommended
Package | TO-247N
Packing Type | Tube
Unit Quantity | 450
Minimum Package Quantity | 30
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

280

Generation

2nd Gen (Planar)

Drain Current[A]

14

Total Power Dissipation[W]

108

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

16x21 (t=5.2)

Common Standard

AEC-Q101 (Automotive Grade)

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Features:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant
  • Qualified to AEC-Q101

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