S2308
1200V, 14A, Silicon-carbide (SiC) MOSFET Bare Die
S2308
1200V, 14A, Silicon-carbide (SiC) MOSFET Bare Die
S2308 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
Product Detail
Specifications:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
280
Generation
2nd Gen
Drain Current[A]
14
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Features:
· Low ON resistance· Fast switching speed
· Fast revese recovery
· Easy to parallel
· Simple to drive
