S2307

1200V, 68A, Silicon-carbide (SiC) MOSFET Bare Die
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S2307

S2307
1200V, 68A, Silicon-carbide (SiC) MOSFET Bare Die

S2307 is an SiC (Silicon Carbide) power MOSFET. Features include high voltage withstand capability, low ON-state resistance, and fast switching speed.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.

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* This is a standard-grade product.
For Automotive usage, please contact Sales.
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Product Detail

 
Part Number | S2307
Status | Active
Package |
Unit Quantity |
Minimum Package Quantity |
Packing Type |
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

45

Generation

2nd Gen

Drain Current[A]

68

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

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Features:

· Low ON resistance
· Fast switching speed
· Fast revese recovery
· Easy to parallel
· Simple to drive
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