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N-channel SiC power MOSFET Bare Die - S2301

S2301 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number | S2301
Status | Active
Package |
Unit Quantity |
Minimum Package Quantity |
Packing Type |
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mO]

80.0

Drain Current[A]

40.0

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Features:

· Low ON resistance
· Fast switching speed
· Fast revese recovery
· Easy to parallel
· Simple to drive