S2301
1200V, 40A, Silicon-carbide (SiC) MOSFET Bare Die
S2301
1200V, 40A, Silicon-carbide (SiC) MOSFET Bare Die
S2301 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
Product Detail
Specifications:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
80
Generation
2nd Gen
Drain Current[A]
40
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Features:
· Low ON resistance· Fast switching speed
· Fast revese recovery
· Easy to parallel
· Simple to drive
