BV1LA025EFJ-C
Automotive IPD 1ch Low Side Switch

The BV1LA025EFJ-C is an automotive 1ch low side switch IC, which has built-in Dual TSD, OCP and active clamp function.

Product Detail

 
Part Number | BV1LA025EFJ-CE2
Status | Recommended
Package | HTSOP-J8
Packing Type | Taping
Unit Quantity | 2500
Minimum Package Quantity | 2500
RoHS | Yes

Functional Safety:

Category : FS supportive
A product that has been developed for automotive use and is capable of supporting safety analysis with regard to the functional safety.

Specifications:

Type

Low side switches

Generation

GEN2

Qualification Grade

AEC-Q100 (Automotive Grade)

Feature

Standard / Error Flag

Overcurrent Protection

Limitation

Thermal Shut Down

Self-restart

Channel Number [ch]

1

ON Resistance(Typ.)[mΩ]

25

ON Resistance(Max.)[mΩ]

62.5

Nominal Current(Typ.)[A]

9

Supply Voltage(Min.)[V]

3.5

Supply Voltage(Max.)[V]

5.5

Drain-Source Voltage (Max.)[V]

42

Single Pulse Energy 25°C [mJ]

220

Over Current Limit (Min.)[A]

9

Under voltage Detection Level(Max.)[V]

3.5

Current consumption(Typ.)[µA]

85

Junction Temperature Tj (Min.)[°C]

-40

Junction Temperature Tj (Max.)[°C]

150

Package Size [mm]

4.9x6 (t=1)

Find Similar

Features:

  • Built-in Dual TSD (This IC has thermal shutdown (Junction temperature detect) and ΔTj Protection (Power-MOS steep temperature rising detect))
  • AEC-Q100 Qualified (Grade1)
  • Built-in Over Current Protection Function (OCP)
  • Built-in Active Clamp Function
  • Direct Control Enabled from CMOS Logic IC, etc.
  • On Resistance RDS(ON) = 25 mΩ (Typ) (when VIN 5 V, IOUT = 2.4 A, Tj 25 ℃)
  • Monolithic Power Management IC with the Control Block (CMOS) and Power MOS FET Mounted on a Single Chip
X

Most Viewed