BD3GD03NVX-LB (New)
4A/6A 1ch High-speed Gate Driver with Built-in LDO for GaN HEMT
BD3GD03NVX-LB (New)
4A/6A 1ch High-speed Gate Driver with Built-in LDO for GaN HEMT
This product is a rank product for the industrial equipment market. This is the best product for use in these applications. The BD3GD02NVX-LB and BD3GD03NVX-LB are 1-channel gate drivers for driving GaN HEMTs at high speed. The high-speed gate driver circuit for GaN HEMTs and the LDO that generates the gate drive voltage are enclosed in a 6-pin SON compact package, which is especially optimized for driving E-mode GaN HEMT devices. Since the input is compatible with the gate drive voltage for Si FETs, it can be connected to the gate drive line for Si FETs in an existing system to drive GaN HEMTs without any system modifications. The output pins are divided into source and sink drive pins, and the slew rates of the source and sink sides can be adjusted separately with external resistors. As protection functions, a low input malfunction prevention circuit (UVLO) between VDD and GND and a low output voltage protection circuit (UVP) between VREG and GND are provided.
Product Detail
Specifications:
Configuration
Low-side
Isolation Type
Non-isolated
Channel
1
Vcc1(Min.)[V]
5.25
Vcc1(Max.)[V]
18
I/O Delay Time(Max.)[ns]
Rise=14ns(typ)/ Fall=14ns(typ)
Min. Input Pulse Width[ns]
10
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
125
Package Size [mm]
2.0x2.0 (t=0.6)
Features:
- Built-in LDO for Drive Voltage Control.
- Wide Operating Input Voltage Range.
- Supports Non-invert Operating Input and Invert Operating Input.
- Low Propagation Delay.
- Built-in VDD UVLO Protection.
- Built-in VREG UVP Protection.
