RS1E200GN
Nch 30V 57A Power MOSFET

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

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Product Detail

 
Part Number | RS1E200GNTB
Status | Active
Package | HSOP8 (Single)
Packing Type | Taping
Unit Quantity | 2500
Minimum Package Quantity | 2500
RoHS | Yes

Specifications:

Package Code

HSOP8S (5x6)

Applications

Power Supply

Number of terminal

8

Polarity

Nch

Drain-Source Voltage VDSS[V]

30

Drain Current ID[A]

57

RDS(on)[Ω] VGS=4.5V(Typ)

0.0047

RDS(on)[Ω] VGS=10V(Typ)

0.0036

RDS(on)[Ω] VGS=Drive (Typ)

0.0047

Total gate charge Qg[nC]

7.8

Power Dissipation (PD)[W]

25

Drive Voltage[V]

4.5

Mounting Style

Surface mount

Bare Die Part Number

Available: K4509

Storage Temperature (Min)[℃]

-55

Storage Temperature (Max)[℃]

150

Package Size [mm]

5.0x6.0 (t=1.1)

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Features:

  • Low on - resistance
  • High Power Package (HSOP8)
  • Pb-free lead plating; RoHS compliant
  • Halogen Free
  • 100% Rg and UIS Tested
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