RJ1N10BBH (New)
Nch 80V 235A, TO-263AB, Power MOSFET

RJ1N10BBH is a power MOSFET with low on-resistance and high power package, suitable for switching, motor drives, and DC/DC converter.

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Product Detail

 
Part Number | RJ1N10BBHTL1
Status | Recommended
Package | TO-263AB-3LSHYAD
Packing Type | Taping
Unit Quantity | 800
Minimum Package Quantity | 800
RoHS | Yes

Specifications:

Package Code

TO-263AB

Applications

Switching

Number of terminal

3

Polarity

Nch

Drain-Source Voltage VDSS[V]

80

Drain Current ID[A]

235

RDS(on)[Ω] VGS=6V(Typ)

0.00191

RDS(on)[Ω] VGS=10V(Typ)

0.00166

RDS(on)[Ω] VGS=Drive (Typ)

0.00191

Total gate charge Qg[nC]

120

Power Dissipation (PD)[W]

189

Drive Voltage[V]

6

Trr (Typ)[ns]

92

Mounting Style

Surface mount

Storage Temperature (Min)[℃]

-55

Storage Temperature (Max)[℃]

150

Package Size [mm]

10.11x15.1 (t=4.77)

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Features:

  • Low on - resistance
  • High power mold package (TO263AB)
  • Pb-free plating ; RoHS compliant
  • Halogen Free
  • 100% Rg and UIS tested
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