US6M11
1.5V Drive Nch+Pch MOSFET
US6M11
1.5V Drive Nch+Pch MOSFET
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Package Code
SOT-363T
JEITA Package
SC-113DA
Number of terminal
6
Polarity
Nch+Pch
Drain-Source Voltage VDSS[V]
20
Drain Current ID[A]
1.5
RDS(on)[Ω] VGS=1.5V(Typ)
0.3
RDS(on)[Ω] VGS=2.5V(Typ)
0.17
RDS(on)[Ω] VGS=Drive (Typ)
0.3
Total gate charge Qg[nC]
1.8
Power Dissipation (PD)[W]
1
Drive Voltage[V]
1.5
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
2.0x2.1 (t=0.85)
Features:
· Low voltage(1.5V) drive type· Nch+Pch Middle-power MOSFET
· Small Surface Mount Package
· Pb Free/RoHS Compliant
