2D/3D/CAD
- TSSOP-B8 Footprint / Symbol
BR25G512FVT-3
512KBit, SPI BUS, Low Power Serial EEPROM
BR25G512FVT-3
BR25G512FVT-3
512KBit, SPI BUS, Low Power Serial EEPROM
BR25G512-3 is a 512kbit serial EEPROM of SPI BUS interface.
Data Sheet
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* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
Product Detail
Part Number | BR25G512FVT-3GE2
Status |
Recommended
Package |
TSSOP-B8
Unit Quantity | 3000
Minimum Package Quantity | 3000
Packing Type | Taping
RoHS |
Yes
Specifications:
Series
BR25G-3
Density [bit]
512K
Bit Format [Word x Bit]
64K x 8
Vcc(Min.)[V]
1.8
Vcc(Max.)[V]
5.5
Circuit Current (Max.)[mA]
4
Standby Current (Max.)[μA]
1
Write Cycle (Max.)[ms]
5
Input Frequency (Max.)[Hz]
10M
Endurance (Max.)[Cycle]
106
Data Retention (Max.)[Year]
100
I/F
SPI BUS
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
85
Package Size [mm]
3x6.4 (t=1.2)
Features:
- High Speed Clock Action up to 10MHz (Max)
- Wait Function by HOLDB Terminal
- Part or Whole of Memory Arrays Settable as Read only Memory Area by Program
- 1.8V to 5.5V Single Power Source Operation Most Suitable for Battery Use
- Up to 128 Bytes in Page Write Mode.
- For SPI BUS interface (CPOL, CPHA) = (0, 0), (1, 1)
- Self-timed Programming Cycle
- Low Current Consumption
·At Write Action (5V) : 0.7mA (Typ)
·At Read Action (5V) : 2.4mA (Typ)
·At Standby Action (5V) : 0.1µA (Typ) - Address Auto Increment Function at Read Action
- Prevention of Write Mistake
·Write Prohibition at Power On
·Write Prohibition by Command Code (WRDI)
·Write Prohibition by WPB Pin
·Write Prohibition Block Setting by Status Registers (BP1, BP0)
·Prevention of Write Mistake at Low Voltage - More than 100 years Data Retention
- More than 1 Million Write Cycles
- Bit Format 64K×8
- Initial Delivery Data
Memory Array: FFh
Status Register: WPEN, BP1, BP0 : 0
