BR25H160FVM-2C
16KBit, SPI BUS, Serial EEPROM for Automotive (125℃ Operation)
BR25H160FVM-2C
BR25H160FVM-2C
16KBit, SPI BUS, Serial EEPROM for Automotive (125℃ Operation)
BR25H160-2C is a serial EEPROM of SPI BUS interface method.
Product Detail
Part Number | BR25H160FVM-2CTR
Status |
Recommended
Package |
MSOP8
Unit Quantity | 3000
Minimum Package Quantity | 3000
Packing Type | Taping
RoHS |
Yes
Functional Safety:
Category : FS supportive
A product that has been developed for automotive use and is capable of supporting safety analysis with regard to the functional safety.
Specifications:
Series
BR25H-2C
Density [bit]
16K
Bit Format [Word x Bit]
2K x 8
Vcc(Min.)[V]
2.5
Vcc(Max.)[V]
5.5
Circuit Current (Max.)[mA]
3
Standby Current (Max.)[μA]
10
Write Cycle (Max.)[ms]
4
Input Frequency (Max.)[Hz]
10M
Endurance (Max.)[Cycle]
106
Data Retention (Max.)[Year]
100
I/F
SPI BUS
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
125
Package Size [mm]
2.9x4 (t=0.9)
Common Standard
AEC-Q100 (Automotive Grade)
Features:
・High speed clock action up to 10MHz (Max.)・Wait function by HOLDB terminal.
・Part or whole of memory arrays settable as read only
memory area by program.
・2.5V to 5.5V single power source action most
suitable
for battery use.
・Page write mode useful for initial value write at
factory shipment.
・For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1)
・Self-timed programming cycle.
・Low Supply Current
At write operation (5V) : 1.0mA (Typ.)
At read operation (5V) : 1.0mA (Typ.)
At standby operation (5V) : 0.1μA (Typ.)
・Address auto increment function at read operation
・Prevention of write mistake
Write prohibition at power on.
Write prohibition by command code (WRDI).
Write prohibition by WPB pin.
Write prohibition block setting by status registers
(BP1, BP0).
Prevention of write mistake at low voltage.
・MSOP8, TSSOP-B8, SOP8, SOP-J8 Package
・Data at shipment Memory array: FFh, status register
WPEN, BP1, BP0 : 0
・More than 100 years data retention.
・More than 1 million write cycles.
・AEC-Q100 Qualified.
