BR25A512FVT-3M
512KBit, SPI BUS, Serial EEPROM for Automotive (105℃ Operation)
Not Recommended for New Designs
BR25A512FVT-3M
512KBit, SPI BUS, Serial EEPROM for Automotive (105℃ Operation)
This product cannot be used for new designs (Not recommended for design diversion).
Product Detail
Functional Safety:
Specifications:
Series
BR25A-3M
Density [bit]
512K
Bit Format [Word x Bit]
64K x 8
Vcc(Min.)[V]
2.5
Vcc(Max.)[V]
5.5
Circuit Current (Max.)[mA]
4
Standby Current (Max.)[μA]
10
Write Cycle (Max.)[ms]
5
Input Frequency (Max.)[Hz]
10M
Endurance (Max.)[Cycle]
106
Data Retention (Max.)[Year]
100
I/F
SPI BUS
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
105
Package Size [mm]
3.0x6.4 (t=1.2)
Common Standard
AEC-Q100 (Automotive Grade)
Features:
- High Speed Clock Action up to 10MHz (Max)
- Wait Function by HOLDB Terminal
- Part or Whole of Memory Arrays Settable as Read only Memory Area by Program
- 2.5V to 5.5V Single Power Source Operation Most Suitable for Battery Use
- Up to 128 Bytes in Page Write Mode
- For SPI BUS Interface (CPOL, CPHA) = (0, 0), (1, 1)
- Self-timed Programming Cycle
- Low Current Consumption
·At Write Action (5V) : 0.7mA (Typ)
·At Read Action (5V) : 2.4mA (Typ)
·At Standby Action (5V) : 0.1µA (Typ) - Address Auto Increment Function at Read Action
- Prevention of Write Mistake
·Write Prohibition at Power On
·Write Prohibition by Command Code (WRDI)
·Write Prohibition by WPB Pin
·Write Prohibition Block Setting by Status Registers (BP1, BP0)
·Prevention of Write Mistake at Low Voltage - More than 100 years Data Retention
- More than 1 Million Write Cycles
- Bit Format 64K×8
- Initial Delivery Data
Memory Array : FFh
Status Register: WPEN, BP1, BP0 : 0
