650V 30A Field Stop Trench IGBT - RGTH60TS65D | ROHM Semiconductor - ROHM Co., Ltd.
Rohm Productdetail
650V 30A Field Stop Trench IGBT - RGTH60TS65D
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
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Specifications:
Series
TH: High speed SW
VCES [V]
650
IC(100°C)[A]
30
VCE(sat) (Typ.) [V]
1.6
tf(Typ.) [ns]
47
Built-in Diode
FRD
Pd [W]
194
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Features:
1) Low Collector - Emitter Saturation Voltage2) High Speed Switching
3) Low Switching Loss & Soft Switching
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
5) Pb - free Lead Plating ; RoHS Compliant