RGT8BM65D
5µs Short-Circuit Tolerance, 650V 4A, FRD Built-in, TO-252, Field Stop Trench IGBT
RGT8BM65D
RGT8BM65D
5µs Short-Circuit Tolerance, 650V 4A, FRD Built-in, TO-252, Field Stop Trench IGBT
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Data Sheet
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* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
Product Detail
Part Number | RGT8BM65DTL
Status |
Recommended
Package |
TO-252
Unit Quantity | 2500
Minimum Package Quantity | 2500
Packing Type | Taping
RoHS |
Yes
Specifications:
Series
T: For inverter (tsc 5µs)
VCES [V]
650
IC(100°C)[A]
8
VCE(sat) (Typ.) [V]
1.65
tf(Typ.) [ns]
71
tsc(Min.) [us]
5
Built-in Diode
FRD
Pd [W]
62
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
6.6x10 (t=2.2)
Features:
1) Low Collector - Emitter Saturation Voltage2) Low Switching Loss
3) Short Circuit Withstand Time 5us
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
5) Pb - free Lead Plating ; RoHS Compliant
