GNP3290TJ-Z (Under Development)
EcoGaN™, 650V 6A TO252-J3F, E-mode Gallium-Nitride(GaN) HEMT
GNP3290TJ-Z (Under Development)
EcoGaN™, 650V 6A TO252-J3F, E-mode Gallium-Nitride(GaN) HEMT
The GNP3290TJ-Z is a 650V enhancement-mode GaN HEMT. It is suitable for applications such as high switching frequency converters and high-density converters. As part of ROHM’s EcoGaN™ lineup, this product leverages the high-speed switching performance of GaN to help reduce application power consumption, downsize peripheral components, and reduce design workload and component count, contributing to energy-saving and compact system designs.
Product Detail
Specifications:
VDS [V]
650
IDS [A]
6
VGS Rating [V]
7
RDS(on) [mΩ]
290
Qg [nC]
1.3
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Dimensions [mm]
6.6x10.1 (t=2.38)
Features:
- 650V E-mode GaN HEMT
- 290mΩ Resistance
- 1.3nC Gate Charge
- HBM ESD Class 1C (JEDEC standard)
