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REFACDC035 - Reference Design

Built-in SiC MOSFET Isolated Fly-back Converter QR method Output 48 W 24 V

This reference design uses BM2SC12xFP2.


  • (1) Built-in 1700 V SiC MOSFET
  • (2) Wide input voltage range by SiC MOSFET: DC = 300 V to 900 V, AC = 210 Vac to 480 Vac
  • (3) High power surface mount type package TO263-7L.
  • (4) This is a ranked product that guarantees a long-term supply for the industrial equipment market.

BM2SC123FP2-EVK-001

Design Resources

 

Specifications

 
Board Number Input voltage Input Frequency Output voltage Maximum output power Output current range Stand-by Power Efficiency Output ripple voltage Size Operating Temperature
BM2SC123FP2-EVK-001 300 to 900Vdc 210 to 480Vac 47 to 63Hz 24V(Typ.) 48W Iout=2A 0 to 2A *1 310mW Iout=0A 91% Iout=2A Vin=300V(DC) 200mVpp(Max.) *2 60mm x 180mm -10 to 65deg.C
Remarks:
*1 Please adjust operating time, within any parts surface temperature under 105 °C
*2 Not include spike noise

Distribution Inventory

 

Key Components

 
Board Number Part Number Product Category Datasheet Status SPICE LTspice Thermal Model Symbol & Footprint 3D STEP Samacsys ECAD Library Calc Tool ROHM Solution Simulator
BM2SC123FP2-EVK-001 1SS355VM Switching Diodes - Recommended - - - - -
BM2SC123FP2-EVK-001 BM2SC123FP2-LBZ AC/DC Converters ICs - Recommended - -
BM2SC123FP2-EVK-001 LTR100JZPFL Current Detection Resistors - Recommended -
BM2SC123FP2-EVK-001 RF2001T3DNZ Fast Recovery Diodes - Active - -
BM2SC123FP2-EVK-001 RRE02VSM4S Standard Rectifier Diodes - Recommended - - - - -