REFACDC034 Built-in SiC MOSFET Isolation Fly-back Converter QR method Output 48W 24V Reference Design

REFACDC34

A system-level evaluation board that combines ROHM's IC and discrete products. We have already solved not only the characteristics of individual products but also the problems that may occur when combining them to build a system, thus contributing significantly to the reduction of development time for our customers.

REFACDC034
Built-in SiC MOSFET Isolation Fly-back Converter QR method Output 48W 24V Reference Design

Summary

The BM2SCQ123T-EVK-001 evaluation board outputs 24V voltage from the input of 300 to 900Vdc. The output current supplies up to 2.0A. The BM2SCQ123T which is quasi-resonant method DC/DC converter IC built-in 1700V SiC MOSFET (Silicon-Carbide) is used.

The BM2SCQ123T contributes to low EMI by soft switching in quasi-resonant method. The integrated 1700V 4A SiC MOSFET contributes to ease of power supply design. Built-in burst mode reduces power loss at light loads.
The BM2SCQ123T is a ranked product that guarantees a long-term supply for the industrial equipment market.

Specification

Product Name	BM2SCQ123T-EVK-001
Input Voltage Range	300 to 900V
Output Voltage	24.0V
Maximum Output Power	48W Iout=2A
Output Current Range	0.0 to 2.0A^*1
Stand-by Power	310mW Iout=0A
Efficiency	90% Iout=2A
Output Ripple Voltage	100mVpp^*2
Operating Temperature	-10 to 65deg.C