Not Recommended for New Designs SCT3160KLHR - Documentation

This product cannot be used for new designs (Not recommended for design diversion).

White Paper

 Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs In recent years, the advancing digitization of applications is expanding the number and role of electronic circuits, resulting in a considerable amount of man-hours spent on circuit design, from component selection during application development to board design and evaluation. This document discribes the solution for solving customer issues for each design flow with ROHM's support and tools.

Application Note

 Part Explanation For SiC MOSFET Calculating Power Loss from Measured Waveforms This application note describes how to calculate the power loss of a SiC MOSFET from measured switching waveforms in a switching circuit with a SiC MOSFET Calculation of Power Dissipation in Switching Circuit This application note describes how to calculate the power dissipation that occurs in a SiC MOSFET in a switching circuit with the SiC MOSFET during switching operations. Notes for Temperature Measurement Using Thermocouples This application note explains cautions regarding the temperature measurement. The content of this application note is generally applicable, irrespective of the types of semiconductor devices. Two-Resistor Model for Thermal Simulation This application note explains the two-resistor model, which is the simplest model among thermal models used in thermal simulations. The thermal simulations mentioned three-dimensional model thermal conduction and thermal fluid analysis tools. What is a Thermal Model? (SiC Power Device) Thermal models are models for performing simulations in relation to heat among SPICE models. Simulations using the thermal models are performed to make a rough estimate during the initial stage of thermal design. This application note explains the thermal models. Notes for Temperature Measurement Using Forward Voltage of PN Junction This application note explains cautions regarding the temperature measurement Using Forward Voltage of PN Junction. The content of this application note is generally applicable, irrespective of the types of semiconductor devices. How to Use Thermal Models This application note explains that how to get and use the thermal models, and the simulation method. Precautions during gate-source voltage measurement for SiC MOSFET SiC MOSFET has relatively huge current and voltage change during switching operation, therefore it is needed to measure precisely for surge in between Gate and Source terminal. This application note will explain the precautions, general measurement method, connecting probes, selecting the measurement point and precaution with bridge configuration during the gate - source voltage measurement. Method for Monitoring Switching Waveform This application note explains how to correctly monitor the switching waveforms of the power device element such as switching power supply or a motor drive circuit. Snubber circuit design methods for SiC MOSFET This application note illustrates a way to design snubber circuit, which is one of the methods to suppress surges voltages and currents. Application Note for SiC Power Devices and Modules Learn more about silicon carbide and its use in ROHMs SiC Power Devices and Modules. Gate-source voltage behaviour in a bridge configuration In this application note, we focus on Gate-Source voltage in MOSFET bridge configuration based on one of the simplest power circuits, a synchronous rectification boost converter to understand the switching operation in detail. Gate-Source Voltage Surge Suppression Methods This application note aims to present the best countermeasures while clarifying the causes of the surge that occurs between gate and source of the MOSFET. Impedance Characteristics of Bypass Capacitor This application note focuses on the impedance characteristics of capacitors, and explains cautions for selecting bypass capacitors.